PART |
Description |
Maker |
GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44 256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM RES, MTF 20K 1/4W 2% ER 16C 16#16 SKT PLUG ER 13C 3#8 3#12 7#16 SKT PLUG 10ns 256K X 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM Electronic Theatre Controls, Inc. GSI[GSI Technology] N.A. ETC
|
GS74104ATP-10 GS74104AJ-10I GS74104AGJ-10 GS74104A |
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO44 1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO32 1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO32 1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO44 1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 8 ns, PDSO44
|
GSI Technology, Inc.
|
GS74117AX-8I GS74117AX GS74117AX-10 GS74117AX-10I |
256K x 16 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
N04L63W2AB27I N04L63W2AB27IT N04L63W2AT27I N04L63W |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
|
ON Semiconductor
|
N04M163WL1A |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM 12ns 256K x 18 4Mb sync burst SRAM 8.5ns 256K x 18 4Mb sync burst SRAM 8ns 256K x 18 4Mb sync burst SRAM 10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
M68AF127BL55MC6 M68AF127BMC M68AF127B M68AF127BB M |
1Mbit 128K x8, 5V Asynchronous SRAM 1Mbit28K的8V的异步SRAM AML22 Series, Electronic Control Pushbutton, Square, Standard Bezel, Lighted, 1 LED, DPDT, Momentary Action, Snap in panel mount 1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
HY62VF08401C HY62VF08401C-SS55I |
512K X 8 STANDARD SRAM, 55 ns, PDSO32 Super Low Power Slow SRAM - 4Mb
|
HYNIX SEMICONDUCTOR INC
|
M68AR016DN70ZB1T M68AR016DN70ZB6T M68AR016DN70ZH1T |
1M X 16 STANDARD SRAM, 70 ns, PBGA48 16 MBIT (1M X16) 1.8V ASYNCHRONOUS SRAM 16 Mbit 1M x16 1.8V Asynchronous SRAM 16 MBIT (1M X16) 1.8V ASYNCHRONOUS SRAM Circular Connector; No. of Contacts:15; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:28-17 RoHS Compliant: No AB 7C 3#8 4#12 PIN RECP 1600万x16 1.8异步SRAM ER 12C 12#16 SKT RECP LINE 1600万x16 1.8异步SRAM AB 12C 12#16 SKT RECP 1600万x16 1.8异步SRAM
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
IS61NVF12836A-6.5B2 IS61NVF12836A-6.5B2I IS61NLF25 |
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 6.5 ns, PBGA119 128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 7.5 ns, PBGA165 128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 6.5 ns, PQFP100 128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 7.5 ns, PBGA119 128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 7.5 ns, PQFP100 128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|